Interface Structure and Atomic Bonding Characteristics in Silicon Nitride Ceramics
نویسندگان
چکیده
منابع مشابه
Interface structure and atomic bonding characteristics in silicon nitride ceramics.
Direct atomic resolution images have been obtained that illustrate how a range of rare-earth atoms bond to the interface between the intergranular phase and the matrix grains in an advanced silicon nitride ceramic. It has been found that each rare-earth atom bonds to the interface at a different location, depending on atom size, electronic configuration, and the presence of oxygen at the interf...
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Wafers with 1 μm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical–mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si–Si hydrophilic bonding. A mechanis...
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Combining orientation dependent electrically detected magnetic resonance and g tensor calculations based on density functional theory we assign microscopic structures to paramagnetic states involved in spin-dependent recombination at the interface of hydrogenated amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic r...
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Crack deflection and the subsequent growth of delamination cracks can be a potent source of energy dissipation during the fracture of layered ceramics. In this study, multilayered ceramics that consist of silicon nitride (Si3N4) layers separated by boron nitride/silicon nitride (BN/Si3N4) interphases have been manufactured and tested. Flexural tests reveal that the crack path is dependent on th...
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ژورنال
عنوان ژورنال: Science
سال: 2004
ISSN: 0036-8075,1095-9203
DOI: 10.1126/science.1104173